? semiconductor components industries, llc, 2012 february, 2012 ? rev. 5 1 publication order number: njd35n04/d njd35n04g, njvnjd35n04g, NJVNJD35N04T4G npn darlington power transistor this high voltage power darlington has been specifically designed for inductive applications such as electronic ignition, switching regulators and motor control. features ? exceptional safe operating area ? high v ce ; high current gain ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these are pb ? free devices* benefits ? reliable performance at higher powers ? designed for inductive loads ? very low current requirements applications ? internal combustion engine ignition control ? switching regulators ? motor controls ? light ballast ? photo flash maximum ratings rating symbol value unit collector ? emitter sustaining voltage v ceo 350 vdc collector ? base breakdown voltage v cbo 700 vdc collector ? emitter breakdown voltage v ces 700 vdc emitter ? base voltage v ebo 5.0 vdc collector current continuous peak i c i cm 4.0 8.0 adc base current i b 0.5 adc total power dissipation @ t c = 25 ? c derate above 25 ? c p d 45 0.36 w w/ ? c operating and storage junction temperature range t j , t stg ? 65 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information darlington power transistors 4 amperes 350 volts 45 watts ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. njd35n04g dpak (pb ? free) 75 units / rail marking diagram y = year ww = work week njd35n04 = device code g = pb ? free device dpak case 369c style 1 yww njd 35n04g http://onsemi.com njvnjd35n04g dpak (pb ? free) njd35n04t4g 2,500 / tape & reel dpak (pb ? free) 75 units / rail NJVNJD35N04T4G 2,500 / tape & reel dpak (pb ? free)
njd35n04g, njvnjd35n04g, NJVNJD35N04T4G http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance junction ? to ? case junction ? to ? ambient r jc r ja 2.78 71.4 ? c/w electrical characteristics (t c = 25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 10 ma, l = 10 mh) v ceo(sus) 350 ? ? v collector cutoff current (v ce = 500 v) (i b = 0) (v ce = 500 v, t c = 125 ? c) i ces ? ? ? ? 50 250 a collector cutoff current (v ce = 250 v) (i b = 0) (v ce = 200 v, t c = 125 ? c) i ceo ? ? ? ? 50 250 a emitter cutoff current (v be = 5.0 vdc) i ebo ? ? 5.0 a on characteristics collector ? emitter saturation voltage (i c = 2.0 a, i b = 20 ma) (i c = 2.0 a, i b = 20 ma 125 ? c) v ce(sat) ? ? ? ? 1.5 1.5 v base ? emitter saturation voltage (i c = 2.0 a, i b = 20 ma) (i c = 2.0 a, i b = 20 ma 125 ? c) v be(sat) ? ? ? ? 2.0 2.0 v base ? emitter on voltage (i c = 2.0 a, v ce = 2.0 v) (i c = 2.0 a, v ce = 2.0 v 125 ? c) v be(on) ? ? ? ? 2.0 2.0 v dc current gain (i c = 2.0 a, v ce = 2.0 v) (i c = 4.0 a, v ce = 2.0 vdc) h fe 2000 300 ? ? ? ? ? dynamic characteristics current ? gain ? bandwidth product (i c = 2.0 a, v ce = 10 v, f = 1.0 mhz) f t 90 ? ? mhz output capacitance (v cb = 10 v, i e = 0, f = 0.1 mhz) c ob ? 60 ? pf switching characteristics v cc = 12 v, v clamp = 250 v, l = 4 mh i c = 2 a, i b1 = 20 ma, i b2 = ? 20 ma t s t f ? ? 18 0.8 ? ? sec 2 k b c e figure 1. darlington circuit schematic
njd35n04g, njvnjd35n04g, NJVNJD35N04T4G http://onsemi.com 3 typical characteristics 25 ? c 125 ? c 10,000 0.1 1.0 10 i c , collector current (amps) h fe , dc current gain v ce = 2 v 1000 100 10 4.0 0.1 1.0 10 i c , collector current (amps) v ce(sat) , collector ? emitter saturation voltage (v) i c /i b = 100 3.0 2.5 1.0 0.5 0 20 50 10 30 50 170 t, temperature ( ? c) p d , power dissipation (w) 0 figure 2. power derating figure 3. dc current gain figure 4. collector ? emitter saturation voltage figure 5. base ? emitter saturation voltage t c 25 ? c 125 ? c 2.4 0.1 1.0 10 i c , collector current (amps) v be(sat) , base ? emitter saturation voltage (v) 2.0 1.6 1.2 0.8 0 0.4 2.0 0.1 1.0 10 i c , collector current (amps) v be(on) , base ? emitter voltage (v) 1.6 0.8 1.2 0.4 figure 6. base ? emitter voltage figure 7. forward bias safe operating area (fbsoa) 10 10 100 1000 v ce , collector ? emitter voltage (v) i c , collector current (a) 1.0 0.1 0.01 70 90 110 130 150 15 45 10 40 5.0 35 30 25 2.0 1.5 3.5 25 ? c 125 ? c i c /i b = 100 25 ? c 125 ? c 300 s 1 ms 10 ms dc 100 ms v ce = 2 v
njd35n04g, njvnjd35n04g, NJVNJD35N04T4G http://onsemi.com 4 package dimensions dpak case 369c ? 01 issue d style 1: pin 1. base 2. collector 3. emitter 4. collector 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 njd35n04/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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